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US 5,470,618 AGranted
Method of making zinc-based transparent conductive film
AssigneeNippon Soken, Inc.
InventorsFumio Ohara, Tadashi Hattori, Nobuei Ito, Yutaka Hattori, Masumi Arai
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Abstract
A zinc oxide-based transparent conductive film containing of gallium or indium and having a resistivity of not more than 10.sup.-3 .OMEGA..cm is provided by evaporating a source of zinc oxide containing 0.5 to 5% by weight of gallium oxide or 0.3 to 4.5% by weight of indium oxide and depositing same onto a substrate after activating the vapor of the source by a plasma.
Claims7
A process for forming a zinc oxide-based transparent conductive film, comprising the steps of:
- arranging a substrate on which the zinc oxide-based film is to be deposited, and an evaporation source substantially composed of zinc oxide containing one of indium oxide and gallium oxide in a vacuum chamber;
- evacuating the vacuum chamber;
- evaporating the source to produce evaporated particles;
- activating the evaporated particles by a plasma excited by a radio frequency power in the range of 20 W to 100 W;
- and
- depositing by ion plating the activated evaporated particles onto the substrate by heating the substrate to at least 50.degree. C. to form a transparent zinc oxide-based film doped with one of indium and gallium, the resistivity of which is controlled to be not more than 5.times.10.sup.-4 .OMEGA..cm by the radio frequency power.
3 more elements
Dependencies are inferred from the claim text.