Ti-W sputtering target and method for manufacturing same

A method of manufacturing a sputtering target consisting essentially of a matrix of Ti-W phase, segregated portions of Ti having a diameter of 50 .mu.m or less distributed in said matrix, segregated portions of W having a diameter of 20 .mu.m or less distributed in said matrix, the method comprising the steps of:

• mixing high purity W powder having a maximum particle size of 10 .mu.m or less and at least one kind of high purity Ti powder and high purity TiH.sub.2 powder to produce a mixed powder, said mixed powder containing 5-20% of said high purity Ti powder and said high purity TiH.sub.2 powder, the balance W and unavoidable impurities;
• placing said mixed powder in a mold with a partition plate disposed between said mold and said mixed powder, and reducing impurities in said mixed powder by heating said mold under a high vacuum;
• and
• heating the mixed powder in the range of 1200.degree. C. to 1600.degree. C. under vacuum and under high applied pressure to induce diffusion of Ti and to densify the mixed powder.