Process for manufacturing a plug-diode mask ROM
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Cheng Sung, Ling Chen
Life of this patent
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Abstract
A method of manufacture of a Mask ROM on a semiconductor substrate comprises formation of a first plurality of conductor lines in a first array. A dielectric layer is formed upon the device with a matrix of openings therein in line with the first array. The openings expose the surface of the first conductor lines. Semiconductor diodes are formed in the matrix of openings in contact with the first conductor lines. A second plurality of conductor lines are formed on the surface of the dielectric layer in a second array of conductor lines orthogonal to the first plurality of conductor lines in the first array. A second plurality of conductor lines is aligned with the matrix and is in contact with the upper ends of the semiconductor diodes.
Claims10
A method of manufacture of a Mask ROM on a semiconductor substrate comprising,
- formation of a first plurality of conductor lines in a first array,
- formation of a dielectric layer upon said substrate with a matrix of openings therein in line with said first array, said openings exposing the surface of said first conductor lines,
- formation of semiconductor diodes in said matrix of openings in contact with said first conductor lines,
- formation of a second plurality of conductor lines on the surface of said dielectric layer in a second array of conductor lines orthogonal to said first plurality of conductor lines in said first array,
- said second plurality of conductor lines being aligned with said matrix, and
- said second plurality of conductor lines being in contact with the upper ends of said semiconductor diodes.
Dependencies are inferred from the claim text.