Method for making silicon-germanium devices using germanium implantation
AssigneeDalsa, Inc.
InventorsChettypalayam R. Selvakumar, Savvas G. Chamberlain
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Abstract
Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.
Claims11
A method of fabricating a silicon-germanium device on a silicon or polycrystalline silicon substrate, comprising at least one step of implanting said substrate with Ge+, to realize active binary Group IV SiGe alloy regions within Si which are substantially free from defects, during fabrication of the device, wherein the maximum germanium concentration in the said active regions is less than 50%.
Dependencies are inferred from the claim text.