Thermoelectric cooling device for thermoelectric refrigerator, process for the fabrication of semiconductor suitable for use in the thermoelectric cooling device, and thermoelectric refrigerator using the thermoelectric cooling device

A thermoelectric cooling device for a thermoelectric refrigerator, said device being composed of:

• a number of p-type semiconductor layers and n-type semiconductor layers arranged side by side,
• a first inner heat conductor having heat-absorbing-side electrodes disposed outside heat-absorbing-side ends of the p-type and n-type semiconductor layers,
• a first outer heat conductor disposed outside the first inner heat conductor,
• a second inner heat conductor having heat-dissipating-side electrodes disposed outside heat-dissipating-side ends of the p-type and n-type semiconductor layers, and
• a second outer heat conductor disposed outside the second inner heat conductor,
• said p-type semiconductor layers and said n-type semiconductor layers being electrically connected in alternating series via said heat-absorbing-side electrodes and said heat-dissipating-side electrodes,
• wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness smaller than 0.08 cm but greater than 0 cm, and the average figures of merit of said p-type semiconductor layers and n-type semiconductor layers are controlled at 3.0.times.10.sup.-3 /K or above, the thermal conductance of said first inner heat conductor within a range of 8-20 w/.degree.C.cm.sup.2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said first outer heat conductor within a range of 7-10 w/.degree.C.cm.sup.2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said second inner heat conductor within a range of 8-20 w/.degree.C.cm.sup.2 of the cross-sectional area of both the p-type and n-type semiconductor layers, and the thermal conductance of said second outer heat conductor within a range of 7-10 w/.degree.C.cm.sup.2 of the cross-sectional area of both the p-type and n-type semiconductor layers, whereby the coefficient of performance defined in terms of the ratio of the quantity J.sub.Q of absorbed heat to inputted power is at least 0.6.