Alignment system for a Half-Field Dyson projection system
AssigneeUltratech Stepper, Inc.
InventorsDavid A. Markle, Gerald J. Alonzo, Hwan J. Jeong
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Abstract
An alignment system for a unit magnification system (such as a Half-Field Dyson system) for use in microlithography is provided. The alignment system provides for aligning a pattern on a reticle with a complementary pattern on a wafer.
Claims23
An alignment system for a stepper employing a Half-Field Dyson projection system;
- wherein said alignment system may be used to align an image of at least one key disposed on a reticle with at least one target disposed on a wafer, in which said one key includes a key diffraction-grating pattern having a given angular orientation and a given line spacing and said one target includes a target diffraction-grating pattern having an angular orientation corresponding to said given angular orientation and a line spacing substantially equal to a predetermined integer multiple of said given line spacing;
- and wherein said alignment system comprises:
- first means including said Half-Field Dyson projection system for imaging alignment light diffracted from said one-key diffraction-grating pattern onto said wafer in response to said one-key diffraction-grating being illuminated with alignment light comprising a given range of wavelengths;
- and
- second means for detecting coincidence in the position of said one wafer target and the position on said wafer of the image of said one reticle key, wherein said second means includes third means shaped, sized and positioned to have incident thereon only diffracted alignment light of at least two certain selected orders reflected from said one-target diffraction-grating pattern and substantially no diffraction-order alignment light reflected from said one-key diffraction-grating pattern, and said second means detects changes in the intensity of alignment light incident on said third means as said wafer and said reticle are moved relative to one another, whereby said one wafer target substantially coincides with the image on said wafer of said one reticle key when the intensity of alignment light incident on said third means is at a maximum.
A reticle for use in an alignment system for a stepper employing a Half-Field Dyson projection system to align an image of keys disposed on said reticle with corresponding targets disposed on a wafer;
- the improvement wherein said reticle comprises:
- a plurality of separated pairs of adjacent first and, second keys, said first key of any pair of said adjacent first and second keys comprising a key diffraction grating pattern having a given angular orientation and a given line spacing, and said second key of that pair of said adjacent first and second keys comprising a key diffraction grating pattern having an angular orientation substantially orthogonal to said given angular orientation that has said given line spacing.
An alignment system for a stepper employing a Half-Field Dyson projection system;
- wherein said alignment system may be used to align an image of at least one grating-like key disposed on a reticle with at least one;
- grating-like target disposed on a wafer, in which said one grating-like reticle key has a given angular orientation and a given line spacing and said one grating-like wafer target has an angular orientation corresponding to said given angular orientation and a line spacing substantially equal to a predetermined integer multiple of said given line spacing;
- and wherein said alignment system comprises:
- first means including said Half-Field Dyson projection system for providing illumination on the reticle key which appears to originate from the center of the projection system pupil and which images selected diffraction orders not including the zero order from the grating-like reticle key to the wafer target;
- second means including an optical relay shaped, sized and positioned to collect and relay only predetermined low order, near-normal diffraction-orders from the grating-like wafer target which are received on a light detector that is used to locate the position of the intensity maximum as the wafer is moved relative to the reticle;
- and
- third means including an optical relay shaped, sized and positioned to collect and relay only predetermined high order, diffraction orders from the grating-like wafer target which lie outside the maximum numerical aperture of the projection system and which are received on at least one light detector used to locate the position of the intensity maximum as the wafer is moved relative to the reticle.
Dependencies are inferred from the claim text.