Low voltage monolithic protection diode with a low capacitance

A monolithic protection component, comprising:

• at least one monolithic protection diode formed in a low-doped substrate of a first conductivity type having a first surface and a second surface, the monolithic protection diode comprising:
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second highly-doped region of the second conductivity type formed in the second well at a surface thereof;
• a third very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a fourth highly-doped region of the first conductivity type formed in the low-doped substrate in contact with the third region;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second regions;
• and
• a second terminal.

A monolithic unidirectional protection component, comprising:

• a low-doped substrate of a first conductivity type having a first surface and a second surface;
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second highly-doped region of the second conductivity type formed in the second well at a surface thereof;
• a third very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a fourth highly-doped region of the first conductivity type formed in the low-doped substrate in contact with the third region;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second highly doped regions;
• and
• a second terminal including a second conductor coupled to a portion of the substrate in contact with the fourth region and the second well.

A monolithic bidirectional protection component, comprising:

• a low-doped substrate of a first conductivity type having a first surface and a second surface;
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a third highly-doped region of the first conductivity type formed in the low-doped substrate in contact with the third region;
• a third well of the second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a fourth well of the second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a fourth highly-doped region of the first conductivity type formed in the third well at a surface thereof;
• a fifth highly-doped region of the second conductivity type formed in the fourth well at a surface thereof;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second highly-doped regions;
• and
• a second terminal including a second conductor in contact with the respective surfaces of the fifth and sixth regions.

A monolithic protection component, comprising:

• a plurality of monolithic unidirectional protection diodes formed in a low-doped substrate of a first conductivity type having a first surface and a second surface, each of the monolithic protection diodes comprising:
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second highly-doped region of the second conductivity type formed in the second well at a surface thereof;
• a third very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a fourth highly-doped region of the first conductivity type formed in the low-doped substrate in contact with the third region;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second regions;
• and
• a second terminal including a second conductor coupled to a portion of the substrate in contact with the fourth region and the second well.

A monolithic protection component, comprising:

• a plurality of monolithic bidirectional protection diodes formed in a low-doped substrate of a first conductivity type having a first surface and a second surface, each of the monolithic protection diodes comprising:
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second highly-doped region of the second conductivity type formed in the second well at a surface thereof;
• a third very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a fourth highly-doped region of the first conductivity type formed in the low-doped substrate in contact with the third region;
• a third well of the second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a fourth well of the second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a fifth highly-doped region of the first conductivity type formed in the third well at a surface thereof;
• a sixth highly-doped region of the second conductivity type formed in the fourth well at a surface thereof;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second highly-doped regions;
• and
• a second terminal including a second conductor in contact with the respective surfaces of the fifth and sixth regions.

A monolithic unidirectional protection component, comprising:

• a low-doped substrate of a first conductivity type having a first surface and a second surface;
• a first well of a second conductivity type having a mean doping level formed in the low-doped substrate at the first surface thereof;
• a second well of the second conductivity type having the mean doping level formed in the low-doped substrate at the first surface thereof;
• a first highly-doped region of the first conductivity type formed in the first well at a surface thereof;
• a second highly-doped region of the second conductivity type formed in the second well at a surface thereof;
• a third very highly-doped region of the second conductivity type formed in the low-doped substrate at the first surface thereof and in contact with the first well;
• a fourth highly-doped region of the first conductivity type formed in the low-doped substrate in contact with of the third region;
• a first terminal including a first conductor in contact with the respective surfaces of the first and second highly-doped regions;
• and
• a second terminal including a second conductor coupled to a portion of the substrate in contact with the fourth region and the second well.