Method of producing a stencil mask

A method of producing a stencil mask which is provided with plural through-hole patterns having a predetermined configuration and which is used for forming plural resist patterns on a resist on a semiconductor substrate by a high-energy beam which passes through said plural through-hole patterns, comprising the steps of:

• selectively etching in a first surface of a substrate made of a semiconductor to thin a region of said substrate other than the edge of said substrate by,
• forming an inorganic film on said first surface of said substrate,
• forming a resist pattern on the edge of said inorganic film by lithography,
• etching and removing the region of said inorganic film other than the edge of said inorganic film with said resist pattern serving as a mask, thus causing the region of said substrate edge of said substrate to be exposed, and
• wet-etching said first surface of said substrate, thus thinning the region of said substrate other than the edge of said substrate;
• and
• selectively subjecting a second surface of the region of said substrate other than the edge of said substrate to electro-discharge machining using a slender electrode, thus forming plural through-hole patterns having a predetermined configuration in the region of said substrate other than the edge of said substrate.

A method of producing a stencil mask which is provided with plural through-hole patterns having a predetermined configuration and which is used for forming plural resist patterns on a resist on a semiconductor substrate by a high-energy beam which passes through said through-hole pattern, comprising:

• selectively subjecting a first surface of a substrate made of a semiconductor other than the edge of said substrate to electro-discharge machining using a slender electrode, thus forming plural concave patterns having a predetermined configuration in the region of said substrate other than the edge of said substrate;
• and
• selectively etching a second surface of said substrate, thus thinning the region of said substrate other than the edge of said substrate, so that said plural concave patterns are converted into plural through-hole patterns by,
• forming an inorganic film on the second surface of said substrate,
• forming a resist pattern on the edge of said inorganic film by lithography,
• etching and removing the region of said inorganic film other than the edge of said inorganic film with said resist pattern serving as a mask, thus causing the region of said substrate other than the edge of said substrate to be exposed, and
• wet-etching said second surface of said substrate thus thinning the region of said substrate other than the edge of said substrate.