Method for minimizing particle generation on a wafer surface during high pressure oxidation of silicon
AssigneeTexas Instruments Incorporated
InventorsAndrew P. Lane, Norris E. Tidwell
Life of this patent
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Abstract
A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900.degree. C. at a pressure of 500 psi which results in forming an oxide on the polished face of the wafer 2.
Claims8
A method for minimizing contaminant particle formation on the active surface of a wafer during semiconductor device fabrication, the method comprising the steps of:
- supporting a wafer in a depression formed in the upper surface of a wafer support, said wafer being disposed with its active surface facing down in the depression of said wafer support;
- and
- introducing steam at a pressure greater than one atmosphere into the region between the active surface of said wafer and said wafer support.
A method for minimizing contaminant particle generation on a wafer during high pressure oxidation of said wafer in an oxidation reactor comprising:
- placing said wafer in a recessed portion of a second wafer so that the desired portion to receive said oxidation faces said recessed portion;
- and
- introducing an oxidizing gas into the region between said wafer and the recessed portion of said second wafer.
Dependencies are inferred from the claim text.