Method for forming a ceramic oxide capacitor having barrier layers

A method for making an electrical ceramic oxide capacitor together with an integrated circuit device, comprising:

• first forming an integrated circuit device having at least one active region therein;
• then forming a dielectric layer over the integrated circuit device;
• then forming a first barrier over the dielectric layer, said first barrier protecting against diffusion therethrough;
• then forming an interconnect comprised of refractory metal through the diffusion barrier and the dielectric layer to contact the active region, said interconnect having a top and sidewalls exposed above the first barrier;
• then forming a second barrier on the top of the interconnect, said second barrier protecting against reaction with electrical ceramic oxide material and acting as a first electrode;
• then forming a third barrier on the sidewalls of the interconnect, said third barrier protecting against reaction with electrical ceramic oxide material;
• then forming a layer of electrical ceramic oxide material over the first electrode;
• and
• then forming a second electrode over the electrical ceramic oxide layer.