Method of manufacturing charge transfer device

A method of manufacturing a charge transfer device, comprising the steps of:

• depositing a first insulating layer on a semiconductor substrate, the semiconductor substrate having a first conductivity type of charge transfer region for transferring charge packets therein in one direction;
• forming a plurality of first transfer electrodes on the first insulating layer, said first transfer electrodes being spaced from each other;
• removing a portion of each of the first transfer electrodes to shape each of the first transfer electrodes into a staircase configuration;
• implanting a first impurity into the surface of the semiconductor substrate to form an impurity diffusion region which comprises first, second and third subregions having different potentials relative to each other, the first and second subregions being formed underneath each of the first transfer electrodes, the third subregion being formed underneath each of areas of the first insulating layer between the first transfer electrodes;
• depositing a mask on portions of said areas of the first insulating layer and on side portions of the first transfer electrodes;
• and
• implanting a second impurity into the surface of the semiconductor substrate using the mask to form a fourth subregion having a different potential from the third region.

A method of manufacturing a charge-coupled device, comprising the steps of:

• depositing a first insulating layer on a semiconductor substrate, the semiconductor substrate having a first conductivity type of charge transfer region for transferring charge packets thereon in one direction;
• forming a plurality of first transfer electrodes on said first insulating layer, said first transfer electrodes being spaced from each other, each of said transfer electrodes comprising a first film on said first insulating layer and a second film on said first film;
• removing a portion of said second film of each of said first transfer electrodes to shape each of the first transfer electrodes into a staircase configuration;
• implanting a first impurity into the surface of the semiconductor substrate to form an impurity diffusion region which comprises first, second and third subregions having different potentials relative to each other, the first and second subregions being formed underneath each of the first transfer electrodes, the third subregion being formed underneath each of areas of the first insulating layer between the first transfer electrodes;
• depositing a mask on portions of the areas of said first insulating film and side portions of said first transfer electrodes;
• implanting a second impurity into the surface of the semiconductor substrate using the mask to form a fourth subregion having a different potential from the third subregion;
• removing said mask;
• depositing a second insulating film on each of said first transfer electrodes;
• and
• depositing a plurality of second transfer electrodes in said areas, respectively.