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US 5,401,614 AGranted
Mid and deep-UV antireflection coatings and methods for use thereof
AssigneeInternational Business Machines Corporation
InventorsRobert R. Dichiara, James T. Fahey, Pamela E. Jones, Christopher F. Lyons, Wayne M. Moreau, Ratnam Sooriyakumaran, Gary T. Spinillo, Kevin M. Welsh, Robert L. Wood
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Abstract
An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
Claims5
A method of making a relief image by photolithography comprising the steps of:
- (a) applying, to a lithographic substrate, a layer of an antireflective coating composition comprising a polymer selected from the group consisting of poly(vinylnaphthalenes), poly(acenaphthalenes) and poly(vinylbiphenyls), wherein said layer has an optical density of at least 2.0/.mu.m at one or more wavelengths in the range from about 235 to about 280 nm, and wherein said layer is substantially inert to contact reactions with a chemically amplified photoresist composition, and wherein said layer is insoluble in the developer for the chemically amplified photoresist composition;
- and
- (b) applying, over the antireflective coating composition, a layer of a chemically amplified photoresist composition;
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- (c) exposing the photoresist composition to form a latent image;
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- (d) developing the latent image to form a relief image pattern in the photoresist;
- and
- (e) dry etching the relief image pattern into the antireflective coating layer.
6 more elements
Dependencies are inferred from the claim text.