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US 5,400,738 AGranted
Method for producing single crystal diamond film
AssigneeSumitomo Electric Industries, Ltd.
InventorsHiromu Shiomi, Takahiro Imai, Naoji Fujimori
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Abstract
A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.
Claims4
A method for producing a single crystal diamond film for a Schottky diode, which comprises steps of:
- (a) decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound, a dopant, and an oxygen containing compound, wherein said oxygen containing compound is at least one compound selected from the group consisting of oxygen, water and hydrogen peroxide, and wherein said dopant is selected from the group consisting of elemental boron, lithium, nitrogen, phosphorus, sulfur, chloride, arsenic, selenium, and their compounds;
- and
- (b) growing a single crystal diamond film on a substrate in a vapor phase, wherein the single crystal diamond film has a surface roughness less than 100 .ANG., and wherein the substrate is a single crystal diamond having a (100) surface and the film is grown on the (100) plane of the substrate.
Dependencies are inferred from the claim text.