US 5,400,275 A · Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected · patentgrep

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Abstract

A semiconductor memory device comprises a plurality of memory cells arranged in the form of a matrix to constitute rows-and columns, a plurality of first driving lines, connected to the memory cells, for transmitting a first driving signal to the memory cells, one of the plurality of first driving lines being selected by a row address, a plurality of second driving lines, connected to the memory cells, for transmitting a second driving signal to the memory cells, one of the plurality of second driving lines being selected by a column address, a plurality of read/write lines, connected to the memory cells, for performing read/write operations with respect to the memory cells, and a plurality of sense amplifiers connected to the read/ write lines, wherein one of the plurality of sense amplifiers is selected by the column address, and the memory cells in the same column are connected to the same sense amplifier through the read/write lines.

Claims22

Dependent claims

A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix configuration having rows and columns;
first selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said rows;
a plurality of first driving lines, each connected to said memory cells in said one of said rows, for transmitting a first driving signal to said memory cells in said one of said rows, one of said plurality of first .driving lines being selected by a row address designated by said first selection means;
second selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said columns;
a plurality of second driving lines, each connected to said memory cells in said one of said columns, for transmitting a second driving signal to said memory cells in said one of said columns, one of said plurality of second driving lines being selected by a column address designated by said second selection means;
a plurality of read/write lines, each connected to said memory cells in said one of said columns, for performing read/write operations with respect to the memory cells in said one of said columns;
and
a plurality of sense amplifiers, each connected to an associated one of said read/write lines, and selected by the column address designated by said second selection means;
wherein the column address designated by the second selection means selects only one of said plurality of sense amplifiers and activates said only one of said plurality of sense amplifiers.

6 more elements

A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix configuration having rows and columns;
first selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said rows;
a plurality of first driving lines, each connected to said memory cells in said one of said rows, for transmitting a first driving signal to said memory cells in said one of said rows, one of said plurality of first driving lines being selected by a row address designated by said first selection means;
second selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said columns;
a plurality of second driving lines, each connected to said memory cells in said one of said columns, for transmitting a second driving signal to said memory cells in said one of said columns, one of said plurality of second driving lines being selected by a column address designated by said second selection means;
a plurality of read/write lines, each connected to said memory cells in said one of said columns, for performing read/write operations with respect to the memory cells in said one of said columns;
a plurality of sense amplifiers, each connected to an associated one of said read/write lines, and selected by the column address designated by said second selection means;
wherein each of said memory cells is constituted by one MOS transistor having a gate, a drain, and a source, and one ferroelectric capacitor having first and second electrodes,
said first driving lines, said second driving lines, and said read/write lines are word lines, plate lines, and bit lines, respectively,
a gate electrode of said MOS transistor is connected to one of said word lines,
the source and drain of said MOS transistor are respectively connected to one of said bit lines and the first electrode of said ferroelectric capacitor, and
the second electrode of said ferroelectric capacitor is connected to one of said plate lines;
wherein said plate lines and said sense amplifiers are arranged in columns,
each of said sense amplifiers is connected to two of said bit lines which are adjacent to each other and constituting a bit line pair, and
each of said memory cells in the same column are connected to one plate line and are also connected to one of said two bit lines constituting said bit line pair;
wherein said memory cells connected to one of said bit lines constituting said bit line pair are equal in number to said memory cells connected to the other of said bit lines constituting said bit line pair;
wherein said memory cells in the same column are connected to said two bit lines adjacent to each other and one plate line, and
said two bit lines are disposed on opposite sides of said one plate line to be parallel with each other;
said device further comprising:
a sense amplifier activating line, connected to said sense amplifier, for supplying a signal for activating said sense amplifiers to said sense amplifiers,
wherein each of said second driving lines are connected to respective ones of said sense amplifiers to select one of said sense amplifiers by the column address designated by said second selection means;
said device further comprising:
a plurality of plate line drivers arranged in said units of columns, for selectively driving said plate lines;
and
a plate line driver driving line, connected to said plurality of plate line drivers, for supplying a signal for driving said plate line drivers to said plurality of plate line drivers,
wherein each of said second drawing lines are connected to respective ones of said plurality of plate line drivers to select one of said plate line drivers by the column address designated by said second selection means;
said device further comprising:
I/O connecting circuits arranged in columns, each of said I/O connecting circuits being operatively connected to said two bit lines through said sense amplifier in one of said columns;
I/O lines connected to said I/O connecting circuits;
and
an I/O connecting circuit driving line, connected to said I/O connecting circuits, for supplying a signal for driving said I/O connecting circuits to said I/O connecting circuits,
wherein each of said I/O connecting circuits are connected to respective ones of said :second driving lines, and one of said I/O connecting circuits is selected by the column address designated by said second selection means.

29 more elements

A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix configuration having rows and columns;
first selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said rows;
a plurality of first driving lines, each connected to said memory cells in said one of said rows, for transmitting a first driving signal to said memory cells in said one of said rows, one of said plurality of first driving lines being selected by a row address designated by said first selection means;
second selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said columns;
a plurality of second driving lines, each connected to said memory cells in said one of said columns, for transmitting a second driving signal to said memory cells in said one of said columns, one of said plurality of second driving lines being selected by a column address designated by said second selection means;
a plurality of read/write lines, each connected to said memory cells in said one of said columns, for performing read/write operations with respect to the memory cells in said one of said columns;
a plurality of sense amplifiers, each connected to an associated one of said read/write lines, and selected by the column address designated by said second selection means;
wherein each of said memory cells is constituted by one MOS transistor having a gate, a drain, and a source, and one ferroelectric capacitor having first and second electrodes,
said first driving lines, said second driving lines, and said read/write lines are word lines, plate lines, and bit lines, respectively,
a gate electrode of said MOS transistor is connected to one of said word lines,
the source and drain of said MOS transistor are respectively connected to one of said bit lines and the first electrode of said ferroelectric capacitor, and
the second electrode of said ferroelectric capacitor is connected to one of said plate lines;
wherein said plate lines and said sense amplifiers are arranged in columns,
each of said sense amplifiers is connected to two of said bit lines which are adjacent to each other and constituting a bit line pair, and
each of said memory cells in the same column are connected to one plate line and are also connected to one of said two bit lines constituting said bit line pair;
wherein said memory cells connected to one of said bit lines constituting said bit line pair are equal in number to said memory cells connected to the other of said bit lines constituting said bit line pair;
wherein said memory cells in the same column are connected to said two bit lines adjacent to each other and one plate line, and
said two bit lines are disposed on opposite sides of said one plate line to be parallel with each other;
said device further comprising:
precharge circuits, arranged in columns, each of said precharged circuits connected to respective ones of said bit lines adjacent to each other, for precharging said two bit lines;
and
a precharge circuit driving line, connected to said precharge circuits, for supplying a signal for driving said precharge circuits to said precharge circuits,
wherein each of said second driving lines are connected to respective ones of said precharge circuits to select one of said precharge circuits by the column address designated by said second selection means.

20 more elements

A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix configuration having rows and columns;
first selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said rows;
a plurality of first driving lines, each connected to said memory cells in said one of said rows, for transmitting a first driving signal to said memory cells in said one of said rows, one of said plurality of first driving lines being selected by a row address designated by said first selection means;
second selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said columns;
a plurality of second driving lines, each connected to said memory cells in said one of said columns, for transmitting a second driving signal to said memory cells in said one of said columns, one of said plurality of second driving lines being selected by a column address designated by said second selection means;
a plurality of read/write lines, each connected to said memory cells in said one of said columns, for performing read/write operations with respect to the memory cells in said one of said columns;
a plurality of sense amplifiers, each connected to an associated one of said read/write lines, and selected by the column address designated by said second selection means;
wherein each of said memory cells is constituted by one MOS transistor having a gate, a drain, and a source, and one ferroelectric capacitor having first and second electrodes,
said first driving lines, said second driving lines, and said read/write lines are word lines, plate lines, and bit lines, respectively,
a gate electrode of said MOS transistor is connected to one of said word lines,
the source and drain of said MOS transistor are respectively connected to one of said bit lines and the first electrode of said ferroelectric capacitor, and
the second electrode of said ferroelectric capacitor is connected to one of said plate lines;
wherein said plate lines and said sense amplifiers are arranged in columns,
each of said sense amplifiers is connected to two of said bit lines which are adjacent to each other and constituting a bit line pair, and
each of said memory cells in the same column are connected to one plate line and are also connected to one of said two bit lines constituting said bit line pair;
wherein said memory cells connected to one of said bit lines constituting said bit line pair are equal in number to said memory cells connected to the other of said bit lines constituting said bit line pair;
wherein said memory cells in the same column are connected to said two bit lines adjacent to each other and one plate line, and
said two bit lines are disposed on opposite sides of said one plate line to be parallel with each other;
said device further comprising:
a plurality of I/O connecting circuits arranged in columns, each of said plurality of I/O connecting circuits operatively connected to a respective one of said two bit lines through said respective amplifier in one of said columns;
a plurality of I/O lines connected to said I/O connecting circuits;
and
an I/O connecting circuit driving line, connected to each of said plurality of I/O connecting circuits, for supplying a signal for driving said I/O connecting circuits to said plurality of I/O connecting circuits,
wherein said driving lines are connected to said I/O connecting circuits to select one of said I/O connecting circuits by the column address designated by said second selection means.

21 more elements

A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix configuration having rows and columns;
first selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said rows;
a plurality of first driving lines, each connected to said memory cells in said one of said rows, for transmitting a first driving signal to said memory cells in said one of said rows, one of said plurality of first driving lines being selected by a row address designated by said first selection means;
second selection means, operatively coupled to said plurality of memory cells, for selecting said memory cells in one of said columns;
a plurality of second driving lines, each connected to said memory cells in said one of said columns, for transmitting a second driving signal to said memory cells in said one of said columns, one of said plurality of second driving lines being selected by a column address designated by said second selection means;
a plurality of read/write lines, each connected to said memory cells in said one of said columns, for performing read/write operations with respect to the memory cells in said one of said columns;
a plurality of sense amplifiers, each connected to an associated one of said read/write lines, and selected by the column address designated by said second selection means;
wherein each of said memory cells is constituted by one MOS transistor having a gate, a drain., and a source, and one ferroelectric capacitor having first and second electrodes,
said first driving lines, said second driving lines, and said read/write lines are word lines, plate lines, and bit lines, respectively,
a gate electrode of said MOS transistor is connected to one of said word lines,
the source and drain of said MOS transistor are respectively connected to one of said bit lines and the first electrode of said ferroelectric capacitor, and
the second electrode of said ferroelectric capacitor is connected to one of said plate lines;
wherein said plate lines and said sense amplifiers are arranged in columns,
each of said sense amplifiers is connected to two of said bit lines which are adjacent to each ,other and constituting a bit line pair, and
each of said memory cells in the same column are connected to one plate line and are also connected to one of said two bit lines constituting said bit line pair;
wherein said memory cells connected to one of said bit lines constituting said bit line pair are equal in number to said memory cells connected to the other of said bit lines constituting said bit line pair;
wherein said memory cells in the same column are connected to said two bit lines adjacent to each other and one plate line, and
said two bit lines are disposed on opposite sides of said one plate line to be parallel with each other;
said device further comprising:
a sense amplifier activating line, connected to said sense amplifiers, for supplying a signal for activating said sense amplifiers to said sense amplifiers,
wherein each of said second driving lines are connected to respective ones of said sense amplifiers to select one of said sense amplifiers by the column address designated by said second selection means;
said device further comprising:
I/O connecting circuits arranged in columns, each of said I/O connecting circuits being operatively connected to respective ones of said two bit lines through said sense amplifier in one of said columns;
I/O lines connected to said I/O connecting circuits;
and
an I/O connecting circuit driving line, connected to said plurality of I/O connecting circuits, for supplying a signal for driving said I/O connecting circuits to said plurality of I/O connecting circuits,
wherein each of said second driving lines are connected to respective ones of said I/O connecting circuits to select one of said I/O connecting circuits by the column address designated by said second selection means.

24 more elements

Dependencies are inferred from the claim text.