Process for manufacturing integrated circuits with very narrow electrodes

A method for manufacture of an anti-dazzle system for a charge-coupled device, the system having two narrow electrodes that are insulated from a substrate and extend symmetrically on either side of a doped region formed in the substrate and that form a charge removal drain, wherein said method comprises the steps of:

• a) forming a masking layer on a substrate;
• b) etching said layer to define at least one non-protected strip;
• c) forming an opening in the substrate at the place where the substrate is not protected by the masking layer, said opening extending also beneath edges of said opening of the masking layer, and leaving these edges overhanging the opening;
• d) depositing polycrystalline silicon thereon matching a contour of the substrate and the overhanging edges;
• and
• e) removing the silicon by etching, and without masking, so that narrow silicon strips remain substantially only beneath the overhanging edges.