Triamine positive photoresist stripping composition and post-ion implantation baking

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature of between about 150.degree. and 220.degree. C. for a time of from about 15 minutes to about 30 minutes, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula:

• ##STR3## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80.degree. C.

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, thereby depositing ions in the desired area of the semiconductor wafer and in the photoresist layer, after ion implanting and immediately preceding stripping, baking the positive organic photoresist layer at a temperature of between about 150.degree. and 220.degree. C. for a time of from about 15 minutes to about 30 minutes, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula:

• ##STR4## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80.degree. C.