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AssigneeU.S. Philips Corporation
InventorsCornelis A.H.A. Mutsaers, Robertus A.M. Wolters
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A method of manufacturing a semiconductor device whereby on a surface (1) of a semiconductor body (2) a layer comprising aluminum (3) is deposited, in which conductor tracks (4) are etched, between which then an insulating aluminum compound (6) is provided in that a layer of such a material (7) is deposited, which layer is then removed down to the conductor tracks (4) by a bulk reducing treatment, upon which an insulating layer (11) is deposited into which contact windows (13, 14) are etched down to the layer comprising aluminum (4) for local contacting of the conductor tracks (4). The conductor tracks (4) are provided with a top layer (8) before the deposition of the insulating aluminum compound, and the aluminum compound is removed again down to the top layer (8) after the deposition by means of a polishing treatment which is practically incapable of removing the top layer (8). Mutually insulated conductor tracks (4) can be made in this manner which are suitable for use in integrated circuits with a very high integration density (VLSI).
A method of manufacturing a semiconductor device whereby a layer comprising aluminium is deposited on a surface of a semiconductor body, into which layer conductor tracks are etched, between which tracks an insulating aluminium compound is provided by a layer of such a material being deposited and subsequently removed by a bulk reducing treatment down to the conductor tracks, after which a layer of insulating material is deposited in which contact windows are etched down to the layer comprising aluminium for local contacting of the conductor tracks, characterized in that the conductor tracks are provided with a top layer before the deposition of the layer of the insulating aluminium compound, in that the top layer is provided of the same material as said layer of insulating material, and in that after said deposition of the insulating aluminium compound a percentage of the insulating aluminium compound is removed to expose said top layer by a polishing treatment during which a percentage of the top layer between zero percent and a percentage less than said percentage of the insulating aluminium compound is removed.
Dependencies are inferred from the claim text.