Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKazunari Ishimaru
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Abstract
In a semiconductor device of gate self-alignment structure, at least two lamination layer portions each composed of a gate electrode, an insulating film and a conductive film are formed on a semiconductor substrate with a contact hole sandwiched therebetween. A wire is formed on the respective lamination layer portions. Further, a total thickness of the conductive film and the wire is determined to be large enough to prevent impurities implanted into the wire from being doped into the gate electrode. In formation of the gate self-alignment structure, an insulating side wall is formed on the side wall of the contact hole, to insulate the gate electrode from the wire or vice versa.
Claims7
A semiconductor device, comprising:
- a semiconductor substrate;
- at least two gate electrodes formed over said semiconductor substrate;
- a gate oxide film formed between said semiconductor substrate and each of said gate electrodes,
- each of said gate electrodes comprising a first conductive film;
- a first insulating film formed on each of said gate electrodes;
- a second conductive film formed on said first insulating film;
- a second insulating film formed on a part of said gate oxide film in such a way that said second conductive film is exposed, a thickness of said second insulating film being roughly equal to a sum total thickness of said gate electrode, said first insulating film and said second conductive film,
- wherein a contact hole is formed in said second insulating film between said gate electrodes;
- and
- a wire having at least a third conductive film contacting said second conductive film and arranged on said second insulating film and in said contact hole,
- wherein a sum total thickness of said second conductive film and said third conductive film contacting said second conductive film is large enough to prevent impurities implanted into said wire from being doped into said gate electrodes.
A semiconductor device, comprising:
- a semiconductor substrate;
- at least two gate electrodes formed over said semiconductor substrate, wherein a first sidewall of each of said gate electrodes defines a region separating said two gate electrodes;
- a gate oxide film formed between said semiconductor substrate and each of said gate electrodes;
- a first insulating film formed on each of said gate electrodes;
- a first conductive film formed on each of said first insulating films so that an edge of each of said first conductive films is formed above said first sidewalls of said gate electrodes, wherein each of said second conductive films acts as a barrier to prevent etching of said first insulating films adjacent to said first sidewalls of said gate electrodes;
- a second insulating film formed along said first sidewalls of said gate electrodes in such a way that said first conductive films are exposed and a portion of said substrate is exposed, a thickness of said second insulating film being roughly equal to a sum total thickness of said gate electrode, said first insulating film and said first conductive film, wherein a contact hole is formed in said second insulating film between said gate electrodes;
- and
- a wire having at least a second conductive film contacting said first conductive film and substrate within said contact hole, wherein said second conductive film is arranged on said second insulating film.
Dependencies are inferred from the claim text.