Power semiconductor device having an insulated gate field effect transistor and a bipolar transistor
AssigneeFuji Electric Co., Ltd.
InventorsMasahito Otsuki, Katsunori Ueno
Life of this patent
Estimating the term…
Abstract
In a semiconductor device having insulated gate field effect transistors and bipolar transistors, a buried layer of a first conductivity type having an impurity concentration higher than that of a second layer of the first conductivity type is disposed in at least a lower region between a second layer of a second conductivity type and a third layer of the second conductivity type and in the vicinity of a boundary between the second layer of the first conductivity type, which serves as back gates of the field effect transistors and base layers of the bipolar transistors, and the first layer of the second conductivity type.
Claims4
A semiconductor device, comprising:
- a first layer of a first conductivity type;
- a first layer of a second conductivity type formed on said first layer of the first conductivity type;
- a second layer of the first conductivity type formed selectively in said first layer of the second conductivity type;
- a second layer of the second conductivity type formed selectively in a surface layer of said second layer of the first conductivity type with a predetermined interval from an interface between said second layer of the first conductivity type and said first layer of the second conductivity type;
- a third layer of the second conductivity type formed in the surface layer of said second layer of the first conductivity type by being spaced apart from said second layer of the second conductivity type;
- a fourth layer of the second conductivity type formed in the surface layer of said second layer of the first conductivity type with a predetermined interval from said third layer of the second conductivity type;
- a first electrode formed via an insulating film on a surface of said second layer of the first conductivity type disposed between said first layer of the second conductivity type and said second layer of the second conductivity type;
- a second electrode formed via an insulating film on the surface of said second layer of the first conductivity type disposed between said third layer of the second conductivity type and said fourth layer of the second conductivity type;
- a third electrode connected to said second layer of the second conductivity type;
- a fourth electrode connected to said third electrode and connected to said fourth layer of the second conductivity type;
- a fifth electrode connecting said third layer of the second conductivity type with said second layer of the first conductivity type;
- and
- a buried layer of the first conductivity type having an impurity concentration higher than that of said second layer of the first conductivity type, said buried layer being disposed in at least a lower region between said second layer of the second conductivity type and said third layer of the second conductivity type in a vicinity of a boundary between said second layer of the first conductivity type and said first layer of the second conductivity type.
Dependencies are inferred from the claim text.