Method of forming a floating gate programmable read only memory cell transistor

Abstract

A method of forming a floating gate programmable read only memory cell transistor in a semiconductor substrate includes, a) providing a fully patterned floating gate atop the semiconductor substrate; b) oxidizing the semiconductor substrate to define a field oxide region and an active region, the floating gate being provided within the active region; c) providing a floating gate dielectric layer outwardly of the floating gate; d) after providing the floating gate and the field oxide region, masking the active region while conducting a channel stop implant through the field oxide region to within the substrate beneath the field oxide region; and e) after conducting the channel stop implant, providing a patterned word line over the floating gate dielectric layer.

Dependencies are inferred from the claim text.