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US 5,397,663 AGranted
Phase shift mask and method of manufacturing the same
AssigneeSony Corporation
InventorsFumikatsu Uesawa, Michio Negishi, Hideo Shimizu
Life of this patent
Estimating the term…
Abstract
An exposure mask and an exposure method are provided, which can suppress adverse effects of interference edge patterns (sub-shifters) located around a central pattern. The exposure mask has central patterns and edge patterns arranged around each central pattern. The mutual interference of edge patterns is reduced by providing an angle or a phase difference between vicinity edge patterns, or providing a single edge pattern to reduce the light transmission.
Claims8
A phase shift mask which is used for a lithographic process of transferring a pattern, said mask comprising:
- a light-blocking resist film formed on a substrate by controlling the amount of transmission of an exposing light;
- a first and a second light transmitting region formed adjacent to one another on said resist film for transmitting exposure light;
- a first auxiliary light transmitting region constituted by a first auxiliary light transmitting portion formed around said first light transmitting region on said substrate so as to have a long side direction so as to increase the resolution of said first light transmitting region;
- and
- a second auxiliary light transmitting region constituted by a second auxiliary light transmitting portion formed around said second light transmitting region on said substrate so as to have a long side direction to increase the resolution of said second light transmitting region;
- exposing light transmitted through said first and second light transmitting regions having different phases from exposing light transmitted through said first and second auxiliary light transmitting regions;
- the long side directions of said first and second auxiliary light transmitting regions adjacent to each other between said first and second light transmitting regions being positioned at an angle other than zero so as to reduce the influence of exposing light which is transmitted through said first and second auxiliary light transmitting regions which are adjacent to each other.
4 more elements
A phase shift mask used for a lithographic process of transferring a pattern said mask comprising:
- a light blocking resist film formed on a substrate,
- a first and a second light transmitting region formed on said substrate adjacent to one another on said resist film for transmitting exposure light;
- a first auxiliary light transmitting region constituted by a first auxiliary light transmitting portion formed around said first light transmitting region on said substrate so as to have a long side direction to increase the resolution of said first light transmitting region;
- and
- a second auxiliary light transmitting region constituted by a second auxiliary light transmitting portion formed on said substrate around said second light transmitting region so as to have a long side direction which is positioned so as to increase the resolution of said second light transmitting region;
- said first and second auxiliary light transmitting regions which are adjacent to each other being formed on said substrate with phase differences between them and between said first and second light transmitting regions, so as to prevent mutual reinforcement of exposure light transmitted through said first and second auxiliary light transmitting regions which are adjacent to each other.
3 more elements
A phase shift mask used for a lithographic process of transferring a pattern, said mask comprising:
- a light-blocking resist film formed on a substrate by controlling the amount of transmission of exposure light;
- a first and a second light transmitting region formed on said substrate adjacent to one another on said resist for transmitting exposure light;
- a first auxiliary light transmitting region constituted by a first auxiliary light transmitting portion formed on said substrate around said first light transmitting region so as to have a long side direction which increases the resolution of said first light transmitting region;
- and
- a second auxiliary light transmitting region constituted by a second auxiliary light transmitting portion formed on said substrate around said second light transmitting region so as to have a long side direction which increases the resolution of said second light transmitting region;
- said first and second light transmitting regions being formed close to each other, a signal intermediate auxiliary light transmitting region formed on said substrate between said first and second light transmitting regions;
- and
- exposing light which is transmitted through said first and second light transmitting regions having different phases from exposing light which is transmitted through said first and second auxiliary light transmitting regions.
5 more elements
A phase shift mask used for a lithographic process of transferring a pattern said mask comprising;
- a light-blocking region on a substrate by controlling the amount of transmission of exposing light;
- a first and second light transmitting region formed adjacent to one another on said resist film for transmitting exposure light;
- a first auxiliary light transmitting region constituted by a first auxiliary light transmitting portion formed around said first light transmitting region formed on said substrate so as to have a long side direction so as to increase the resolution of said first light transmitting region;
- and
- a second AUXILIARY light transmitting region constituted by a second auxiliary light transmitting portion formed around said second light transmitting region on said substrate so as to have a long side direction so as to increase the resolution of said second light transmitting region;
- and the exposure light which is transmitted through said first and second light transmitting regions having different phases from exposure
- light which is transmitted through said first and second auxiliary light transmitting regions;
- and a third auxiliary light transmitting region which is different in phase from said first and second auxiliary light transmitting regions which is formed between said first and second auxiliary light transmitting regions which are adjacent to each other so as to reduce influence of exposure light transmitted through said first and second auxiliary light transmitting regions.
5 more elements
Dependencies are inferred from the claim text.