Method of forming a ferroelectric film
AssigneeSharp Kabushiki Kaisha
InventorsKazuya Ishihara, Shigeo Onishi
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Abstract
A method of forming a ferroelectric film on a heated support is provided which includes the steps of forming a first layer on the heated support by sputtering a material including lead at a first pressure; and forming a second layer on the first layer by sputtering the material at a second pressure, the second pressure being lower than the first pressure.
Claims13
A method of forming a ferroelectric film on a heated support comprising the steps of:
- forming a first layer on said heated support by sputtering a target of ferroelectric material including lead, the sputtering for forming the first layer being conducted at a first pressure;
- and
- forming a second layer on said first layer by sputtering said target of ferroelectric material, the sputtering for forming the second layer conducted at a second pressure, said second pressure being lower than said first pressure.
A method of forming a ferroelectric film on a heated support comprising the steps of:
- forming a first layer having a perovskite structure on said heated support by sputtering a ferroelectric material including lead, said sputtering for forming said first layer being conducted at a first pressure, said heated support being maintained at a temperature which is sufficiently high in order that said first layer has a perovskite structure;
- and
- forming a second layer on said first layer by sputtering said ferroelectric material, said sputtering for forming said second layer being conducted at a second pressure, said second pressure being lower than said first pressure, said heated support being maintained at a temperature which is sufficiently high in order that said second layer has a polycrystalline structure.
A method of forming a ferroelectric film on a heated support comprising the step of forming a ferroelectric film having a perovskite structure on said heated support by sputtering a ferroelectric material containing lead, said heated support being maintained at a temperature which is sufficiently high in order that said ferroelectric film has a perovskite structure, wherein said sputtering is initially conducted at a first pressure and subsequently conducted at a second pressure to increase a deposition rate of said ferroelectric film, the first pressure being greater than the second pressure.
Dependencies are inferred from the claim text.