Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
AssigneeCanon Kabushiki Kaisha
InventorsMasafumi Sano, Masahiro Kanai
Life of this patent
Estimating the term…
Loading patent…
AssigneeCanon Kabushiki Kaisha
InventorsMasafumi Sano, Masahiro Kanai
Estimating the term…
A method and apparatus for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.
An apparatus for continuously forming functional deposited film by a microwave PCVD method on an elongated member which is being continuously moved comprising:
Dependencies are inferred from the claim text.