Semiconductor device

A semiconductor device having a flip-flop circuit used as a memory cell in a static RAM, and a transfer gate for control of reading and writing data out of and into the memory cell, respectively, comprising:

• a flip-flop circuit having a first MOSFET with a gate electrode having first and second end portions, the gate electrode being formed by a layer of a first level;
• a transfer gate having a second MOSFET with a gate electrode formed by a layer of a second level different from the first level, one of the first and second end portions of the gate electrode of the first MOSFET being overlapped with the gate electrode of the second MOSFET;
• the flip-flop circuit having a third MOSFET with a gate electrode with first and second end portions, the gate electrode being formed by a layer of the first level;
• the transfer gate having a fourth MOSFET with a gate electrode formed by a layer of the second level, one of the first and second end portions of the gate electrode of the third MOSFET being overlapped with the gate electrode of the fourth MOSFET;
• the first, second, third and fourth MOSFETS each having a diffusion layer;
• and
• the other end portion of the gate electrode of the first MOSFET connected to diffusion layers of the third and fourth MOSFETs, and the other end portion of the gate electrode of the third MOSFET connected to diffusion layers of the first and second MOSFETs.