Method of making a semiconductor device using photoresist flow
AssigneeMicron Technology, Inc.
InventorMichael S. Wilhoit
Life of this patent
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Abstract
A process used during the formation of a semiconductor device comprises the formation of a stack having a substrate, a layer of oxide, a polycrystalline silicon layer, and a photoresist mask. An etch is performed to pattern the polycrystalline silicon layer, then the photoresist is flowed to cover the edges of the polycrystalline silicon. Finally, a doping step is performed using the flowed photoresist as a doping barrier, thus allowing for a distance between the poly and an implanted region in the substrate.
Claims18
A process used during the formation of a semiconductor device, comprising the following steps:
- a) forming an insulation layer over a substrate;
- b) forming a conductive layer over said insulation layer;
- c) forming a patterned photoresist layer over said conductive layer;
- d) patterning said conductive layer using said photoresist layer as a mask and forming an edge from said conductive layer;
- e) flowing said photoresist layer to form a photoresist spacer to cover said edge of said conductive layer;
- and
- f) doping said substrate using said photoresist layer as a spacer.
A process for forming a spacer at the edges of a transistor gate during the formation of a semiconductor device, comprising the following steps:
- a) forming a polycrystalline silicon layer over a semiconductor substrate;
- b) forming a photoresist layer over said polycrystalline silicon layer;
- c) etching said polycrystalline silicon layer using said photoresist layer as a mask and forming a pair of edges from said polycrystalline silicon layer;
- d) flowing said photoresist layer over said edges to form spacers from said photoresist layer,
- wherein said polycrystalline silicon layer forms a transistor gate.
A process for forming a spacer at the edge of a conductive structure during the formation of a semiconductor device, comprising the following steps:
- a) forming a conductive layer having a flat surface;
- b) forming a photoresist layer over said conductive layer;
- c) etching said conductive layer using said photoresist layer as a mask and forming an edge from said conductive layer;
- d) flowing said photoresist layer over said edge to form a spacer from said photoresist layer.
Dependencies are inferred from the claim text.