MOSFET with gate-penetrating halo implant
AssigneeVLSI Technology, Inc.
InventorsK. S. Ravindhran, Yu P. Han, Ravi Jhota, Walter D. Parmantie
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Abstract
After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.
Claims5
In a method of forming a MOS transistor having a channel of a predetermined channel conductivity type, said channel defining a channel region, said MOS transistor having a source and a drain of a source conductivity type opposite said channel conductivity type, said source defining a source region, said drain defining a drain region, said method comprising the steps of:
- forming a gate;
- implanting a halo dopant of said channel conductivity type with sufficient energy so that the implant species drives through said gate to a first depth below said channel region, said implant species being driven below said source and drain regions to a second depth deeper than said first depth;
- and
- implanting a source/drain dopant of said source conductivity type into said source and drain region.
A method of fabricating a CMOS integrated circuit, said CMOS circuit having an n-channel transistor and a p-channel transistor formed in and on a silicon substrate, said n-channel transistor having an n-type gate, a p-type heavily doped source, a p-type lightly doped source, an n-type channel, a p-type lightly doped drain, a p-type heavily doped drain, said p-channel transistor having a p-type gate, an n-type heavily doped source, an n-type lightly doped source, a p-type channel, an n-type lightly doped drain, and an n-type heavily doped drain, said method comprising the steps of:
- a) forming an n-well and a p-well in said silicon substrate;
- b) growing a patterned field oxide to isolate said wells;
- c) implanting p-type dopant to adjust channel voltage thresholds;
- d) growing a gate oxide layer;
- e) depositing a polysilicon layer;
- f) patterning said polysilicon layer and said gate oxide layer to define a first polysilicon gate structure for said n-type gate and a second polysilicon gate structure for said p-type gate;
- g) after step f, implanting p-type halo dopant so that:
- some of said p-type halo dopant is implanted into said silicon substrate after penetrating said second polysilicon gate structure to a level below said p-channel but not completely deeper than said heavily doped n-type source and said heavily doped n-type drain, thus imparting p-type conductivity to define said p-type gate, and
- some of said p-type halo dopant is implanted into said silicon without passing through said second polysilicon gate structure to a depth deeper than said heavily doped n-type source and said heavily doped n-type drain;
- h) after step f, implanting n-type source/drain dopant so as to provide the dopant for said n-type lightly doped drain and said n-type lightly doped source;
- i) after step f, implanting n-type halo dopant so that:
- some of said n-type halo dopant is implanted into said silicon substrate after penetrating said first polysilicon gate structure to a level below said n-channel but not completely deeper than said heavily doped p-type source and said heavily doped p-type drain, thus imparting n-type conductivity to define said n-type gate, and
- some of said n-type halo dopant is implanted into said silicon without passing through said first polysilicon gate structure to a depth deeper than said heavily doped p-type source and said heavily doped p-type drain;
- j) after step f, implanting p-type source/drain dopant so as to provide the dopant for said p-type lightly doped drain and said p-type lightly doped source;
- 1) after steps g, h, i, and j, forming oxide sidewalls on said gates;
- m) after step 1, implanting p-type source/drain dopant into said substrate to provide the dopant for said heavily doped p-type source and said heavily doped p-type drain;
- n) after step 1, implanting n-type source/drain dopant into said substrate to provide the dopant for said heavily doped n-type source and said heavily doped n-type drain;
- o) diffusing the dopant implanted in steps g, h, i, j, m and n;
- p) depositing a dielectric;
- q) forming vias in said dielectric;
- r) depositing metal over said dielectric and into said vias;
- and
- q) patterning said metal.
Dependencies are inferred from the claim text.