Method for forming a silicon oxide film on a silicon waffer
AssigneeKabushiki Kaisha Toshiba
InventorsMasako Kodera, Masami Watase, Shiro Mishima, Katsuya Okumura
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Abstract
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
Claims12
A method of forming a silicon oxide film on a silicon wafer, comprising the steps of:
- keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a first temperature;
- heating the supersaturated solution until the solution reaches a thermal equilibrium;
- and
- maintaining for a selected period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
A method of forming a silicon oxide film on a silicon wafer, comprising the steps of:
- keeping a reacting solution of a first temperature on the surface of a silicon wafer in a thickness of not more than 20 mm;
- heating the reacting solution until the solution reaches a thermal equilibrium;
- and
- maintaining for a selected period of time the temperature at which a thermal equilibrium is established in the reacting solution so as to form a silicon oxide film on the surface of the silicon wafer.
Dependencies are inferred from the claim text.