Ultra high purity vapor phase treatment
AssigneeFuji Photo Film Co., Ltd.
InventorsShinzaburo Onda, Kaoru Nozaki, Norihiko Kato
Life of this patent
Estimating the term…
Abstract
A semiconductor wafer vapor phase treatment method and apparatus for dissolving an insulating film formed on a semiconductor wafer at a high speed and high purity. A liquid reagent is heated and vaporized to obtain reagent vapors capable of dissolving an object to be treated. The reagent vapors are passed through a hydrophobic porous film to intercept mists having a diameter greater than a predetermined value and obtain high purity reagent vapors. The purified reagent vapors are supplied to the cooled object. The vapors which dissolved the object are liquidized to generate droplets.
Claims44
A vapor phase treatment method comprising the steps of:
- heating a liquid reagent and generating a reagent vapor, said reagent vapor being capable of dissolving an object to be treated;
- and
- supplying said reagent vapor to a cooled specimen, said object being formed on the surface of said cooled specimen.
A vapor phase treatment apparatus comprising:
- heating means for heating a container for accommodating a liquid reagent;
- cooling means for cooling an object to be treated and placed on said cooling means;
- and
- a gas supply system for communicating the opening of said container to the upper area of said cooling means and supplying a reagent vapor generated in said container to said object.
Dependencies are inferred from the claim text.