Integrated semiconductor configuration

Abstract

An integrated semiconductor configuration includes a semiconductor substrate of a first conductivity type being connected to a first supply potential, having a first region in which switching stages with signal terminals are disposed, and having at least a second region in which at least one connecting line is disposed for connecting the signal terminals of the switching stages. A multiplicity of doping zones are disposed in the second region and have a second conductivity type complementary to the first conductivity type. The doping zones are connected to a second supply potential, the doping zones have a total surface area, and at least a portion of the total surface area is located under the at least one connecting line. The first and second regions are strip-shaped. The first and second regions have long sides bordering one another. The second region has a width and each of the doping zones of the second region extend over the width of the second region. The semiconductor substrate has a segment of the first conductivity type being located between each two of the doping zones.

Dependencies are inferred from the claim text.