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AssigneeSumitomo Electric Industries, Ltd.
InventorsSeiji Nakahata, Takahiro Matsuura, Kouichi Sogabe, Akira Yamakawa
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An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800.degree. to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.
An aluminum nitride sintered body comprising aluminum nitride crystal grains and titanium included as a solid solute in said crystal grains in a weight ratio of at least 50 ppm and not more than 1000 ppm, and containing an oxy-nitride of titanium and aluminum therein in a weight ratio of at least 0.1% and not more than 5.0% in terms of TiO.sub.2, wherein an unpaired electron concentration in said sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g.
Dependencies are inferred from the claim text.