Methods to fabricate large highly reflective metal reflector plates for applications in game chips or similar virtual image projection use

Abstract

A method, and resultant structure, for manufacturing large highly reflective metal reflector plates on an integrated circuit chip, for applications in game chips or similar virtual image projection systems, is described. A metal interconnection layer is formed above a semiconductor substrate, an intermetal dielectric layer is formed on the metal interconnection layer, and an opening is made through the intermetal dielectric layer to expose a portion of the metal interconnection layer. A first metal layer is formed on the intermetal dielectric layer and connecting to the metal interconnection layer through the opening. A second metal layer is formed on the first metal layer. A third metal layer is formed on the second metal layer. A highly reflective metal layer is formed on the third metal layer. The the first, second, third and highly reflective metal layers are patterned to form the highly reflective metal reflector plate. A passivation layer is formed over the highly reflective metal reflector plate and exposed surface of the intermetal dielectric layer. The passivation layer is etched above the highly reflective metal reflector plate to leave a portion of the passivation layer over the entire top surface of the highly reflective metal reflector plate. The portion of the passivation layer is removed with a wet etch, to expose the highly reflective metal reflector plate.

Dependencies are inferred from the claim text.