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US 5,393,680 AGranted
MIS electrode forming process
AssigneeSumitomo Electric Industries, Ltd.
InventorShin-ichi Shikata
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Abstract
There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.
Claims4
A process for forming a MIS electrode, comprising:
- sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate;
- forming an insulation film on said predetermined area by ECR-CVD;
- applying an electrode material to said insulation film;
- and
- heat-treating said insulation film at a temperature between 380.degree. C. and 520.degree. C.
2 more elements
A process for forming a MIS electrode, comprising:
- sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate;
- forming an insulation film by depositing SiN by ECR-CVD on said predetermined area;
- applying an electrode material to said insulation film;
- and
- heat-treating said insulation film at a temperature between 380.degree. C. and 520.degree. C.
2 more elements
Dependencies are inferred from the claim text.