Method for forming a patterned layer by selective chemical vapor deposition
AssigneeNEC Corporation
InventorsFumihiko Uesugi, Shunji Kishida
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Abstract
In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.
Claims8
A method for forming a patterned layer by selective CVD, comprising the steps of:
- providing a substrate in a CVD chamber;
- introducing an organometallic gas into said CVD chamber;
- and
- heating said substrate to a temperature at which said organometallic gas is thermally decomposed to produce vapors of a metal and an organic substance, while irradiating light onto areas of a surface of said substrate, a first CVD layer being deposited onto said areas, and wherein a second CVD layer is formed from deposition of said metal from said organometallic gas onto remaining areas of said substrate, said first CVD layer blocking the growth of said second CVD layer on said areas.
Dependencies are inferred from the claim text.