Method of inhibiting tin whisker growth
AssigneeMicroelectronics and Computer Technology Corporation
InventorColin A. MacKay
Life of this patent
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Abstract
An improved method for inhibiting tin whisker growth involving the implantation in a tin coating of an ion or ions selected from the group Pb, Bi, Sb, Tl, Cu, Ag, Au, Cd, Mo, Cr, W, Ar, He, Ne and Kr.
Claims10
A method for preventing the development and growth of tin whiskers, comprising the steps of:
- providing an electrical component having a tin coating;
- and
- inhibiting whisker growth on the tin coating by implanting into the surface of said tin coating an ion selected from the group consisting of Pb, Bi, Sb, Tl, Cu, Ag, Au, Cd, Mo, Cr, W, Ar, He, Ne, and Kr.
A method for preventing the development and growth of tin whiskers on an electrical component, comprising the steps of:
- providing a tin coating on the electrical component;
- and
- inhibiting whisker growth on the tin coating by implanting into said tin coating from about 1.times.10.sup.14 -1.times.10.sup.16 ions/cm.sup.2 of an antimony ion.
A method for preventing the development and growth of tin whiskers on an electrical component, comprising the steps of:
- providing a tin coating on the electrical component;
- and
- inhibiting whisker growth on the tin coating by implanting into said tin coating from about 1.times.10.sup.14 -1.times.10.sup.16 ions/cm.sup.2 of an argon ion.
A method for preventing the development and growth of tin whiskers on an electrical component, comprising the steps of:
- providing a tin coating on the electrical component;
- and
- inhibiting whisker growth on the tin coating by implanting into said tin coating at least 1.times.10.sup.18 ions/cm.sup.2 of molybdenum ion.
Dependencies are inferred from the claim text.