Loading patent…
AssigneeFujitsu Limited
InventorsToshiya Suzuki, Takayuki Ohba, Shimpei Jinnouchi, Seishi Murakami
Estimating the term…
A refractory metal nitride is deposited at a temperature of 600.degree. C. according to a chemical vapor phase deposition method by using a source gas containing a refractory metallic element and a reduction gas containing one of an alkyl amino compound, alkyl azide compound, hydrazine and a hydrazine alkyl compound for reducing the source gas. This refractory metal nitride is used as a barrier metal material for interconnection in a semiconductor device. When forming a refractory metal nitride as a barrier metal on a silicon layer or forming a contact metal between the barrier metal and the silicon layer, a natural oxide film on the surface of the silicon layer set in a pressure-reduced atmosphere is removed by reducing with hydrazine or a hydrazine alkyl compound.
A method for deposition of a refractory metal nitride, wherein a refractory metal nitride is deposited in a vapor phase by using a source gas containing a refractory metal and a reducing and nitrogenizing gas containing at least one of an alkyl amino compound, an alkyl azide compound, hydrazine and a hydrazine alkyl compound for reducing and nitrogenizing said source gas.
A method for forming a conductive film which has a refractory metal nitride layer, said method comprising:
A method for forming a conductive film having a refractory metal nitride layer, said method comprising:
Dependencies are inferred from the claim text.