Method for depositing compound semiconductor crystal

A method of depositing a crystal of a compound semiconductor on a substrate having a main surface and positioned in a horizontal plane within a reaction chamber, a deposition gas comprising a mixture of at least two material gases being supplied to the reaction chamber and the material gases being pyrolyzed therein, thereby to deposit the compound semiconductor crystal on the substrate main surface, the method comprising:

• defining, on the main surface of the substrate, a central area, a group of plural, intermediate areas contiguous to each other and contiguous to and surrounding the central area, and a group of outer areas, contiguous to each other and contiguous to and surrounding the intermediate areas;
• disposing a plurality of jet ports within the reaction chamber in accordance with the defined areas of the main surface of the substrate and so as to include a central jet port, a group of plural, intermediate jet ports surrounding the central jet port and a group of outer jet ports surrounding the intermediate jet ports;
• supplying the deposition gas in a plurality of gas streams corresponding to the plurality of jet ports;
• individually controlling the respective flow rates of the plurality of gas streams;
• supplying the plurality of gas streams to the plurality of jet ports for correspondingly producing a central gas jet, a group of intermediate gas jets surrounding the central gas jet and a group of outer gas jets surrounding the intermediate gas jets and which are directed vertically onto, and substantially uniformly cover, the main surface of the substrate on which the crystal is to be deposited;
• and
• individually controlling the respective flow rates of the plurality of gas streams to be a common flow rate value.

A method of depositing a crystal of a compound semiconductor on a substrate having a main surface and positioned in a horizontal plane within a reaction chamber, a deposition gas comprising a mixture of at least two material gases being supplied to the reaction chamber and the material gases being pyrolyzed therein, thereby to deposit the compound semiconductor crystal on the substrate main surface, the method comprising:

• selecting the respective compositions of the at least two material gases, the mixture thereof comprising the deposition gas, for depositing a crystal of a III--V compound semiconductor on the substrate;
• supplying the deposition gas in a plurality of gas streams;
• individually controlling the respective flow rates of the plurality of gas streams;
• and
• forming the plurality of gas streams, having individually adjusted flow rates, so as to produce a corresponding plurality of gas jets within the reaction chamber and which are directed vertically onto, and substantially uniformly cover, the main surface of the substrate on which the crystal is to be deposited.