Amorphous silicon rectifying contact on diamond and method for making same
AssigneeKobe Steel USA, Inc.
InventorsVasudev Venkatesan, Dale G. Thompson, Kalyankumar Das
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Abstract
A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
Claims16
A rectifying contact for a semiconductor device, said rectifying contact comprising:
- a semiconducting diamond layer having a dopant concentration of not greater than about 10.sup.18 atoms/cm.sup.3 ;
- and
- a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10.sup.19 atoms/cm.sup.3.
A rectifying contact for a semiconductor device, said rectifying contact comprising:
- a polycrystalline semiconducting diamond layer having a dopant concentration of not greater than about 10.sup.18 atoms/cm.sup.3 ;
- and
- a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10.sup.19 atoms/cm.sup.3.
A rectifying contact for a semiconductor device, said rectifying contact comprising:
- a semiconducting diamond layer;
- and
- a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10.sup.19 atoms/cm.sup.3.
A rectifying contact for a semiconductor device, said rectifying contact comprising:
- a polycrystalline semiconducting diamond layer;
- and
- a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10.sup.19 atoms/cm.sup.3.
Dependencies are inferred from the claim text.