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US 5,359,219 AGranted
Silicon on insulator device comprising improved substrate doping
AssigneeTexas Instruments Incorporated
InventorJeong-Mo Hwang
Life of this patent
Estimating the term…
Abstract
A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried p-layer (16) and a buried n-well region (26) are formed in order to position p-n junctions beneath n-channel and p-channel devices respectively formed in the outer silicon layer (14) outwardly from the p-layer (16) and (n)-well (26).
Claims16
A silicon on insulator device, comprising:
- a silicon substrate having a predetermined conductivity type;
- an insulating layer disposed outwardly from and substantially completely covering said silicon substrate;
- an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer;
- a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type;
- a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said predetermined conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region;
- a first integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said first doped region;
- and
- a second integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said second doped region.
5 more elements
A silicon on insulator device, comprising:
- a silicon substrate having a predetermined conductivity type;
- an insulating layer disposed outwardly from and substantially completely covering said silicon substrate;
- an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer;
- a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type;
- and
- a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region.
3 more elements
Dependencies are inferred from the claim text.