Triangular deposition chamber for a vapor deposition system
AssigneeCVD Incorporated
InventorsJitendra S. Goela, Lee E. Burns, ALexander Teverovsky, James C. MacDonald
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Abstract
A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.
Claims20
An apparatus for the manufacture of materials by vapor deposition comprising:
- a means for supplying a gas at a controlled rate;
- a vapor deposition furnace, having a plurality of side walls, a top cover and a bottom cover;
- a plurality of first mandrel plates within said vapor deposition furnace, said first mandrel plates made from a material suitable for use in a vapor deposition furnace, wherein said first mandrel plates are arranged to form a vapor deposition cell having an outside, an inside, a first end, and a second end, said inside of said vapor deposition cell defining a vapor deposition chamber having a triangular cross section;
- a means to heat said vapor deposition chamber;
- and
- a means to conduct said gas to said first end of said vapor deposition chamber such that said reaction gas will flow through said vapor deposition chamber from said first end to said second end where said gas exits the vapor deposition chamber;
- wherein said gas flows parallel to the surface of the heated mandrel plates and said gas is deposited onto said heated mandrel plates to form a vapor deposited structure.
A process for the manufacture of materials by vapor deposition having a high gas utilization efficiency comprising:
- supplying a gas at a controlled rate to a vapor deposition furnace, having a plurality of side walls, a top cover and a bottom cover, a plurality of first mandrel plates within said vapor deposition furnace, said first mandrel plates made from a material suitable for use in a vapor deposition furnace, wherein said first mandrel plates are arranged to form a vapor deposition cell having an outside, an inside, a first end, and a second end, said inside of said vapor deposition cell defining a vapor deposition chamber having a triangular cross section;
- heating said vapor deposition chamber;
- and
- conducting said gas to said first end of said vapor deposition chamber such that said reaction gas will flow through said vapor deposition chamber from said first end to said second end where said gas exits the vapor deposition chamber;
- wherein said gas flows parallel to the surface of the heated mandrel plates and said gas is deposited onto said heated mandrel plates to form a vapor deposited structure.
A process for the manufacture of silicon carbide structures by chemical vapor deposition having a high gas utilization efficiency comprising:
- supplying a reaction gas at a controlled rate to a chemical vapor deposition furnace, having a plurality of side walls, a top cover and a bottom cover;
- a plurality of first mandrel plates within said chemical vapor deposition furnace, said first mandrel plates made from a material suitable for use in a chemical vapor deposition furnace, wherein said first mandrel plates are arranged to form a chemical vapor deposition cell having an outside, an inside, a first end, and a second end, said inside of said chemical vapor deposition cell defining a chemical vapor deposition chamber having a triangular cross section;
- heating said chemical vapor deposition chamber;
- and
- conducting said reaction gas to said first end of said chemical vapor deposition chamber such that said reaction gas will flow through said chemical vapor deposition chamber from said first end to said second end where said reaction gas exits the chemical vapor deposition chamber;
- wherein said reaction gas flows parallel to the surface of the heated mandrel plates and said reaction gas is reacted to form a product which is deposited onto said heated mandrel plates to form a chemical vapor deposited structure.
Dependencies are inferred from the claim text.