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US 5,354,490 AGranted
Slurries for chemical mechanically polishing copper containing metal layers
AssigneeMicron Technology, Inc.
InventorsChris C. Yu, Trung T. Doan
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsChris C. Yu, Trung T. Doan
Estimating the term…
A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 0, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 0.sub.2, HOCl, KOCl, KMnO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.
A chemical mechanical polishing slurry comprising:
A chemical mechanical polishing slurry comprising:
A chemical mechanical polishing slurry comprising:
A chemical mechanical polishing slurry comprising:
Dependencies are inferred from the claim text.