Optical mass storage system and memory cell incorporated therein
OwnerSadeg M. Farisinventor
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OwnerSadeg M. Farisinventor
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This application relates to a new read-write optical storage technology which is based on the cholesteric liquid crystal (CLC) polymer property of selective reflection at a characteristic wavelength. Each layer in a multi-layer CLC storage arrangement has a different characteristic wavelength, making it possible to randomly select any layer for reading, writing or erasing. Each layer incorporates a plurality of memory cells, in a write/erase mode, disposed on a dye polymer material or having such dye polymer material integrated into the CLC material such that, in the presence of light and electric or magnetic fields, the molecules of the CLC material are heated and align themselves with the electric or magnetic field. To the extent that the CLC molecules align themselves with a magnetic field normal to the plane of a storage element, electromagnetic energy in the form of light or infrared radiation at a specific wavelength, in a read mode, will be reflected. Any other orientation whether due to the presence of a magnetic or electric field or heating alone will be transparent to any other wavelength and a circular polarization opposite to the polarization of an incident reading beam. Finally, a disk storage system and a multi-layered storage system for reading, displaying and printing stored information are shown to indicate applications of the cholesteric liquid crystal storage technology.
An optical memory comprising an information storage element which includes a plurality of information storage regions at least one of which, in one mode, causes a reflection of incident circularly polarized electromagnetic radiation of a given wavelength and, in another mode, transmits electromagnetic radiation, and, means associated with said storage element for reversibly switching said at least one of said storage regions between said modes.
A memory cell comprising a cholesteric liquid crystal which is reflecting to incident circularly polarized electromagnetic radiation at a given wavelength, and, means for reversibly altering said crystal to change said crystal from reflecting to transparent to said incident electromagnetic radiation.
An optical memory comprising a plurality of information storage elements each of which includes a plurality of information storage regions at least one which is reflecting to a given circular polarization of incident electromagnetic radiation, said at least one of said storage regions of one of said plurality of storage elements being reflecting at one of a plurality of wavelengths of said incident electromagnetic radiation and at least one of said storage regions of another of said plurality of storage elements being reflecting at another of said plurality of wavelengths of incident electromagnetic radiation, and, means for projecting said plurality of wavelength of incident electromagnetic radiation at said plurality of information storage elements to provide reflections from said storage regions.
Dependencies are inferred from the claim text.