Optical integrated semiconductor device

Abstract

An optical integrated semiconductor device includes a semiconductor substrate, a diffraction grating formed on the semiconductor substrate, an optical waveguide layer deposited on the semiconductor substrate, and at least one of a light-emitting element and a light-detecting element formed on the semiconductor substrate. At least one of the thickness and refractive index of the optical waveguide layer has a value which varies depending on the position in the semiconductor substrate. The optical waveguide layer, the light-emitting element, and the light-detecting element are preferably formed by selective area growth employing vapor-phase epitaxy. The diffraction grating preferably has a constant period. Preferably, the semiconductor substrate is made of InP and the optical waveguide layer is made of In.sub.X Ga.sub.1-X As.sub.y P.sub.1-Y where X and Y have values ranging from 0 to 1.

Dependencies are inferred from the claim text.