Thin-film transistor

A thin-film transistor comprising:

• an insulating substrate;
• a gate insulating film;
• a gate electrode and a semiconductor film formed above said insulating substrate to oppose each other through the gate insulating film;
• a blocking layer, made entirely of a metal oxide film formed by a chemical reaction, and formed on a channel portion of said semiconductor film, for preventing etching of the channel portion;
• ohmic contact layers comprised of n-type semiconductor films doped with an impurity, and electrically insulated from each other, and being electrically connected to said semiconductor film;
• source and drain electrodes arranged with a predetermined gap and electrically connected to said semiconductor film through said ohmic contact layers;
• a plurality of transparent pixel electrodes arranged in the form of a matrix and connected to said source electrodes;
• first conductive lines formed among said pixel electrodes on said substrate and extending in one direction, each of said first conductive lines being connected to one of said gate and drain electrodes;
• and
• second conductive lines formed among said pixel electrodes on said substrate and extending in a direction perpendicular to said first conductive lines, each of said second conductive lines being connected to the other electrode of said gate and drain electrodes,
• said blocking layer being continuously formed on the channel portions of said semiconductor films, and at a portion facing at least one of said first conductive lines and said second conductive lines, and wherein a width of a portion of said blocking layer facing at least one of said first conductive lines and said second conductive lines is smaller than that of said at least one of said first conductive lines and said second conductive lines.

A thin-film transistor array comprising:

• an insulating substrate;
• a plurality of pixel electrodes arranged above said insulating substrate in the form of a matrix;
• first conductive lines formed among said pixel electrodes on said substrate and extending in one direction;
• second conductive lines formed among said pixel electrodes on said substrate and extending in a direction perpendicular to said first conductive lines;
• and
• thin-film transistors arranged on said substrate to correspond to said pixel electrodes, each of said thin-film transistors being arranged such that one of gate and drain electrodes of each of said thin-film transistors is connected to a corresponding one of said first and second conductive lines, and each of said thin-film transistors including:
• a gate electrode and a semiconductor film formed to oppose each other through a gate insulating film;
• ohmic contact layers comprised of n-type semiconductor films doped with an impurity, electrically insulated from each other on said semiconductor film, and electrically connected to said semiconductor film;
• and
• source and drain electrodes arranged on said semiconductor film with a predetermined gap to form a channel portion, and electrically connected to said semiconductor film through said ohmic contact layers;
• and wherein at least one of said gate electrode, said ohmic contact-layers, and said source and drain electrodes is formed of a conductive film which extends substantially over an entire element area of the thin-film transistor and is entirely anodized except for a predetermined pattern having a predetermined shape forming the at least one of said gate electrode, said ohmic contact layers, and said source and drain electrodes, so as to form a continuous oxide film by a chemical reaction, the continuous oxide film existing without being removed.

A thin film transistor comprising:

• an insulating member;
• a gate electrode formed on said insulating member;
• a first insulating film formed on said insulating member and integrally formed with said gate electrode, said gate electrode and said first insulating film being formed by anodizing a part of a metal film which occupies an entire transistor forming region of said insulating member;
• a second insulating film formed on said gate electrode and on said first insulating film;
• a semiconductor layer formed on said second insulating film and facing said gate electrode;
• and
• a source electrode and a drain electrode separated from each other and connected to said semiconductor layer.

A thin film transistor comprising:

• an insulating member;
• a gate electrode formed on said insulating member;
• a gate insulating film formed on at least said gate electrode;
• a semiconductor layer formed on said gate insulating film and facing to the gate electrode through said gate insulating film;
• a source electrode and a drain electrode connected to said semiconductor layer;
• and
• an insulating member provided between said source electrode and said drain electrode, and wherein said source electrode, drain electrode and insulating member are integrally formed with each other by anodizing a portion forming said insulating member of a metal film, remaining portions of said metal film serving as said source and drain electrodes.

A thin film transistor comprising:

• an insulating member;
• a gate electrode formed on said insulating member;
• a gate insulating film formed on at least said gate electrode;
• a semiconductor layer formed on said gate insulating film and facing said gate electrode through said gate insulating film;
• first and second ohmic contact layers;
• a source electrode ohmically connected to said semiconductor layer through said first ohmic contact layer;
• a drain electrode ohmically connected to said semiconductor layer through said second ohmic contact layer;
• and
• an insulating member provided between said first and second ohmic contact layers, said first and second ohmic contact layers and said insulating member being integrally formed with each other by anodizing a portion forming said insulating member of an impurity-doped-semiconductor layer, remaining portions of said impurity-doped-semiconductor layer serving as said first and second ohmic contact layers.