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AssigneeRuxam, Inc.
InventorsKonstantin S. Golovanivsky, Erazm M. Omeljanovsky
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Methods and apparatus for etching ultra fine lines of impurities on semiconductors and other materials. A cold diverging ion beam is generated, made to converge, encoded using a mask to correspond to an image, and then used to etch impurities on the substrate. An ECR plasma source is used to generate a warm plasma. A cooled neutral target gas is penetrated by the warm plasma ions so that the plasma ion charge is transferred to the cool target gas to provide cool ions, which are then extracted to provide a cryogenic ion beam. The ion beam is made converging and then encoded by the mask. The ion beam also may be transformed into an atom beam in a charge exchange cell.
Apparatus for producing a converging particle beam for lithographic processing of a target comprising:
Apparatus for use in lithography comprising a heavy particle beam generator having a beam output including charged particles a cooling chamber containing a neutral target gas at a cryogenic temperature and having an input for receiving said beam output so that said beam interacts with said neutral target gas to transfer charge from said beam to said target gas, thereby producing a cryogenic heavy particle beam.
Apparatus for producing a cooled ion beam comprising:
A method for producing a particle beam for use in lithographic processing of a target comprising the steps of generating a cryogenic ion beam, removing from the cryogenic ion beam ions having a thermal energy above a selected thermal energy level, and causing the cryogenic ion beam to converge.
A method for producing a particle beam for use in lithographic processing of a target comprising the steps of:
A method of generating a cyrogenic particle beam, comprising the steps of:
Dependencies are inferred from the claim text.