Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby
AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorsLaszlo Fabry, Manfred Grundner, Dieter Graef, Susanne Bauer-Mayer, Peter John
Life of this patent
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Abstract
A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.
Claims20
A process for producing storage-stable polished surfaces for a silicon wafer having advantageous oxidation properties comprising:
- hydrophilizing the polished wafer surfaces;
- subsequently exposing said polished wafer surfaces to an organosilicon reagent;
- and
- using as said organosilicon reagent a compound selected from the group consisting of haloalkylsilanes having the formula
- R.sub.x.sup.1 SiR.sub.y.sup.s (OR.sup.2).sub.4-x-y
- haloalkyldisilazanes having the formula
- (R.sub.x.sup.1 R.sub.3-x.sup.2 Si).sub.2 NH
- and the mixtures thereof,
- where R.sup.1 is a haloalkyl radical, R.sup.2 is an alkyl radical, x is an integer from 1 to 3, and y is the numeral 0 or 1.
A process for producing storage-stable polished surfaces for a silicon wafer having advantageous oxidation properties comprising:
- hydrophilizing the polished wafer surfaces;
- subsequently exposing said polished wafer surfaces to an organosilicon reagent;
- and
- using as said organosilicon reagent a compound having the formula
- R.sub.x.sup.1 SiR.sub.y.sup.2 (OR.sup.2).sub.4-x-y
- where R.sup.1 is a haloalkyl radical, R.sup.2 is an alkyl radical, x is an integer from 1 to 3, and y is the numeral 0 or 1.
Dependencies are inferred from the claim text.