Method of manufacturing a hetero-junction bi-polar transistor

A method of manufacturing a hetero-junction bipolar transistor comprising the steps of:

• A) forming a beta silicon carbide layer of a first type of conductivity on a top face of a beta silicon carbide substrate of a second type of conductivity which is opposite of that of the first type of conductivity, the beta silicon carbide layer of the first type of conductivity forming a base area of the transistor and the beta silicon carbide substrate of the second type of conductivity forming the collector of the transistor;
• B) forming an alpha silicon carbide layer of the second type of conductivity on the beta silicon carbide layer of the first type of conductivity, the alpha silicon carbide layer of the second type of conductivity forming the emitter of the transistor;
• C) selectively removing a portion of the alpha silicon carbide layer of the second type of conductivity to expose a portion of the beta silicon carbide layer of the first type of conductivity;
• and
• D) respectively forming collector, base, and emitter electrodes on the beta silicon carbide substrate of the second type of conductivity, the beta silicon carbide layer of the first type of conductivity and the alpha silicon carbide layer of the second type of conductivity.