Dielectric ceramic for use in microwave device, a microwave dielectric ceramic resonator dielectric ceramics

Dielectric ceramic for use in a microwave device made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponent of V.sub.2 O.sub.5,

• wherein the composition ration x is within a range of 0.48 .ltoreq..times..ltoreq.0.51, and
• an atomic ratio AR2 defined by the following equations:
• AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO, and
• AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)
• is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range between 875.degree. C. to 1000.degree. C.

Dielectric ceramic for use in a microwave device made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including subcomponents of CuO and V.sub.2 O.sub.5,

• wherein the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51,
• an atomic ratio AR1 defined by the following equations:
• AR1=(the number of Cu atoms of said CuO)/ARO, and
• AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)
• is within a range of 0<AR1.ltoreq.0.01, and
• another atomic range AR2 defined by the following equation:
• AR2=(the number of V atoms of said V.sub.2 O.sub.5)/(ARO
• is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range form 875.degree. C. to 1000.degree. C.

A microwave dielectric resonator comprising:

• first and second external electrodes;
• first and second conductors electrically connected to said first and second external electrodes, respectively;
• a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics;
• and
• a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode,
• wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and
• said dielectric ceramic of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponent of CuO, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51, and an atomic ratio AR1 defined by the following equations:
• AR1=(the number of Cu atoms of said CuO)/ARO, and
• AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)
• is within a range of 0<AR1.ltoreq.0.01, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C.

A microwave dielectric resonator comprising:

• first and second external electrodes;
• first and second conductors electrically connected to said first and second external electrodes, respectively;
• a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics;
• and
• a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode,
• wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and
• said dielectric ceramics of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponents of V.sub.2 O.sub.5, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51and an atomic ratio AR2 defined by the following equations:
• AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO, and
• AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)
• is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C.

A microwave dielectric resonator comprising:

• first and second external electrodes;
• first and second conductors electrically connected to said first and second external electrodes, respectively;
• a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics;
• and
• a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode,
• wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and
• said dielectric ceramics of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponents of CuO and V.sub.2 O.sub.5, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51, an atomic ratio AR1 defined by the following equations:
• AR1=(the number of Cu atoms of said CuO)/ARO, , and
• AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)
• is within a range of 0<AR1.ltoreq.0.01, and another atomic ratio AR2 defined by the following equation:
• AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO
• is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C.