Ionized cluster beam deposition of sapphire

A method for forming a sapphire layer superjacent a substrate, said method comprising the steps of:

• providing sapphire in a crucible having a nozzle;
• positioning said crucible and a substrate within a vacuum chamber, said vacuum chamber having a first pressure level, said substrate comprising at least one of single crystal silicon, polycrystalline silicon, amorphous silicon, aluminum, silicon dioxide, silicon nitride, doped glass, undoped glass, and an oxide;
• heating said crucible to a first temperature to vaporize said sapphire at a second pressure level within said crucible;
• regulating said heating of said crucible at said first temperature by a vibration frequency of a crystal coupled to said substrate, said vibration frequency corresponding to a deposition rate of said deposited sapphire film on said substrate, such that said second pressure level substantially exceeds said first pressure level, thereby forming clusters of sapphire and ejecting said sapphire clusters from said crucible in the direction of said substrate;
• ionizing a portion of said sapphire clusters by electron bombardment, thereby providing a remaining portion of non-ionized sapphire clusters;
• and
• accelerating both said ionized and said non-ionized clusters toward said substrate, thereby forming a sapphire film superjacent said substrate.