Forming a color filter on a semiconductor substrate

Abstract

A manufacturing method for color filter comprises steps of forming a flat layer for smoothing over an image sensor having charge coupled devices or bucket brigade device, forming a first color filter layer and a first inter-layer of dye-proof layer on said flat layer, alternately forming color filter layers and inter-layers in the same manner as above describe steps in order to form a second color filter layer, a second inter-layer, a third color filter layer and a third inter-layer, wherein the first or the third inter-layer is formed of a negative polyimide having a relatively lower thermal shrinkage. In this method, the material for forming the inter-layer which has been the problem in thermal hardening due to the relatively higher thermal shrinkage is substituted with the negative polyimide having a relatively lower thermal shrinkage, so that the stress acted on the interface between the color filter layer and the inter-layer can be minimized, so that image sensor having a superior spectrum characteristic and sensitivity can be obtained.

Dependencies are inferred from the claim text.