High-resolution lithography and semiconductor device manufacturing method

A method for forming a mask pattern for an electronic device, comprising the steps of:

• providing a substrate;
• providing a first layer;
• providing a second layer including a catalyst precursor on said first layer;
• providing a third layer on said second layer;
• irradiating said second layer in accordance with a predetermined pattern to cause said catalyst precursor to produce a catalyst;
• and
• heating said second and third layers to diffuse said catalyst into said third layer to cause a latent image to form in said third layer in accordance with said predetermined pattern.

A method for manufacturing an electronic device, comprising the steps of:

• providing a substrate;
• providing a first layer on said substrate;
• providing a second layer on said first layer;
• providing a third layer including a catalyst precursor on said second layer;
• irradiating said third layer in accordance with a predetermined pattern to cause said catalyst precursor to produce a catalyst;
• heating said second and third layers to diffuse said catalyst into said second layer to cause a latent image to form in said second layer in accordance with the predetermined pattern;
• removing said third layer;
• developing said second layer in accordance with said predetermined pattern;
• and
• etching said first layer in accordance with said predetermined pattern.

A method for manufacturing an electronic device, comprising the steps of:

• providing a substrate;
• providing a first layer;
• providing a second layer including a catalyst precursor on said first layer;
• providing a third layer on said second layer;
• irradiating said second layer in accordance with a predetermined pattern to cause said catalyst precursor to produce a catalyst;
• heating said second and third layers to diffuse said catalyst into said third layer to cause a latent image to form in said third layer in accordance with said predetermined pattern;
• developing said third layer in accordance with said predetermined pattern;
• removing said second layer in accordance with said predetermined pattern;
• and
• etching said first layer in accordance with said predetermined pattern.

A method for forming a mask pattern for a device, comprising the steps of:

• providing a substrate;
• providing a first layer, including a catalyst precursor, and, a second layer, in which a latent image is to be formed, on said substrate in any order;
• irradiating said first layer in accordance with a predetermined pattern to cause said catalyst precursor to produce a catalyst;
• forming the latent image in said second layer by diffusing said catalyst into said second layer in accordance with the predetermined pattern;
• and
• developing said second layer in accordance with the predetermined pattern.